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AO7405 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7405 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. Standard Product AO7405 is Pb-free (meets ROHS & Sony 259 specifications). AO7405L is a Green Product ordering option. AO7405 and AO7405L are electrically identical.
Features
VDS (V) = -30V ID = -1.6A (VGS = -10V) RDS(ON) < 150m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) RDS(ON) < 280m (VGS = -2.5V)
SC-70-6 (SOT-363) Top View D D G D D S
D
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -30 12 -1.6 -1.3 -10 0.625 0.4 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 160 180 130
Max 200 220 160
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO7405
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-1.6A Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, ID=-1A VGS=-2.5V, ID=-1A VDS=-5V, ID=-1.6A -0.6 -10 115 195 135 3 190 4 -0.85 150 240 200 280 -1 -0.5 -1 Min -30 -1 -5 100 -1.4 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
gFS VSD IS
Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
409 55 42 12 5.06 0.72 1.58 6.2 3.2 41.2 14.5 13.2 5.4
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=-4.5V, VDS=-15V, ID=-1A
VGS=-10V, VDS=-15V, RL=15, RGEN=3
IF=-1A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-1A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 2 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO7405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 6 4 2 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 250 VGS=-2.5V Normalized On-Resistance 1.6 VGS=-10V 1.4 VGS=-4.5V VGS=-2.5V 1.2 ID=-2A 1 -2V -1.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics -10V -5V -4V -3.5V -3V 10 VDS=-5V 8 6 125C 4 2 25C
-ID (A)
VGS=-2.5V
200 RDS(ON) (m)
150
VGS=-4.5V VGS=-10V
100
50 0 1 2 3 4 5 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 300 250 ID=-1A RDS(ON) (m) 200 150 100 50 0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C -IS (A)
-ID(A)
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C
Alpha & Omega Semiconductor, Ltd.
AO7405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600 5 4 -VGS (Volts) 3 2 1 0 0 1 2 3 4 5 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-1A 500 Capacitance (pF) 400 300 200 Coss 100 Crss Ciss
100.0
TJ(Max)=150C TA=25C RDS(ON) limited 100s 10ms 0.1s 1s 10s DC 1ms 10s
Power (W)
20
10.0 -ID (Amps)
TJ(Max)=150C TA=25C
15
1.0
10
0.1
5
0.0 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=200C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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